| 1. | Semiconductor devices - part 8 : field - effect transistors
半导体装置.第8部分:场效应晶体管 |
| 2. | Slot field - effect transistor
沟道场效应晶体管 |
| 3. | Semiconductor devices . discrete devices . part 8 : field - effect transistors
半导体器件分立器件第8部分:场效应晶体管 |
| 4. | Field - effect transistor
场效晶体管 |
| 5. | Blank detail specification - single gate field - effect transistors ; german version en 150012 : 1991
空白详细规范.单栅场效应晶体管 |
| 6. | In this paper , the properties and processes of sic field - effect transistor are mainly investigated
本文主要研究sic场效应晶体管的特性和制作工艺。 |
| 7. | Semiconductor devices . discrete devices and integrated circuits . part 8 : field - effect transistors
半导体器件.分立器件和集成电路.第8部分:场效应晶体管 |
| 8. | Single walled carbon nanotube ; chemical vapor deposition ; schottky barriers ; field - effect transistor
单壁碳纳米管化学气相沉积肖特基势垒场效应晶体管 |
| 9. | Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications
半导体分立器件.电力开关设备的金属氧化物半导体场效应晶体管 |
| 10. | Semiconductor discrete device . detail specification for silicon n - channel deplition mode field - effect transistor of type cs146
半导体分立器件. cs146型硅n沟道耗尽型场效应晶体管.详细规范 |
